发明名称 CMOS imager and method of formation
摘要 A CMOS imager having multiple graded doped regions formed below respective pixel sensor cells is disclosed. A deep retrograde p-well is formed under a red pixel sensor cell of a semiconductor substrate to increase the red response. A shallow p-well is formed under the blue pixel sensor cell to decrease the red and green responses, while a shallow retrograde p-well is formed below the green pixel sensor cell to increase the green response and decrease the red response.
申请公布号 US6756616(B2) 申请公布日期 2004.06.29
申请号 US20010941546 申请日期 2001.08.30
申请人 MICRON TECHNOLOGY, INC. 发明人 RHODES HOWARD E.
分类号 H01L27/146;(IPC1-7):H01L31/062;H01L31/020;H01L21/00;H01L27/00 主分类号 H01L27/146
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