| 摘要 |
This invention provides a method for forming a three dimensional integrated circuit stacked structure (5), as well as a stacked structure formed in accordance with the method. The method includes placing a first integrated (1) circuit atop a second integrated circuit (2), and electrically connecting the first and the second integrated circuits at connection points (20). At least some of the connection points correspond to electrically conductive through-hole structures (12) made through a silicon substrate (14) of the first integrated circuit. The first one of the integrated circuits contains circuitry operating at frequencies equal to or greater than about 1 GHz, and the silicon substrate has a resistivity of at least about 100 ohms-cm. The result is that the electrical performance is not degraded, as the RF signal insertion loss at the through-hole interconnections is significantly reduced. In one embodiment the first integrated circuit (1) contains RF circuitry and the second integrated circuit (2) contains baseband circuitry. In the preferred embodiment the first and the second integrated circuits form a part of a wireless communications device, such as a cellular telephone.
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