发明名称 |
Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices |
摘要 |
Magnetic tunneling junction devices (MTJ) useful for sensing and memory applications and characterized by reduced resistance, magnetic noise, increased sensitivity, and increased magnetoresistance are disclosed herein. A method for fabrication of said MTJ is also disclosed wherein a series of materials are layered upon a substrate under controlled conditions, patterned and subjected to a period of annealing for simultaneously optimizing a plurality of performance parameters.
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申请公布号 |
US6756237(B2) |
申请公布日期 |
2004.06.29 |
申请号 |
US20020105831 |
申请日期 |
2002.03.25 |
申请人 |
BROWN UNIVERSITY RESEARCH FOUNDATION |
发明人 |
XIAO GANG;LIU XIAOYONG |
分类号 |
H01F10/32;H01F41/30;H01L43/12;(IPC1-7):H01L21/00 |
主分类号 |
H01F10/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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