| 摘要 |
The present invention refers to a method of producing a ferroelectric memory which method comprises:a) providing ferroelectric particles,b) providing a substrate,c) orientating at least a subset of said ferroelectric particles such that there is an axis of said particles along which axis a dipole moment may be directed in the ferroelectric state, said axis having an orientation the average of which is in at least one predetermined direction with regard to a surface of said substrate,d) allowing said ferroelectric particles to attach to said substrate,and to a method of storing information on a substrate,and to a memory device.
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