发明名称 Re-usable extreme ultraviolet lithography multilayer mask blank
摘要 An embodiment of the present invention includes an outer capping layer, a multilayer (ML) stack, and an inner capping layer. The outer capping layer is made of an outer material and has an outer thickness. The multilayer (ML) stack is below the outer capping layer. The inner capping layer is made of an inner material and has an inner thickness and is located between the ML stack and a ML reflector. The inner thickness is selected to enable constructive interference between the ML stack and the ML reflector.
申请公布号 US6756163(B2) 申请公布日期 2004.06.29
申请号 US20020186053 申请日期 2002.06.27
申请人 INTEL CORPORATION 发明人 YAN PEI-YANG
分类号 G02B5/08;G03F1/08;G03F1/14;G21K1/06;(IPC1-7):G03F9/00 主分类号 G02B5/08
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