Diffusion barrier and method for its production

摘要

A conductive diffusion barrier surrounding a conductive element is enhanced by an implanted diffusion barrier enhancing material. The enhancing material is implanted using a low energy implant at an angle to the substrate, such that the portion of the diffusion barrier at the bottom of the conductive element is protected during implantation. This prevents the increased resistivity caused by the enhancing material from affecting the conductive path between the conductive element and another conductive element. The diffusion barrier is preferably titanium nitride (TiN) and the enhancing material is preferably silicon (Si).