发明名称 |
Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant |
摘要 |
A method for forming a capping layer for improved adhesion with an underlying insulating layer in a multiple layer semiconductor device manufacturing process including providing a semiconductor wafer including a process surface comprising a dielectric insulating layer; and, providing a capping layer overlying the dielectric insulating layer according to a chemical vapor deposition CVD) process. The capping layer of the present invention has improved adhesion and a reduced dielectric constant with comparable current leakage compared to capping layers of the prior art.
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申请公布号 |
US6756321(B2) |
申请公布日期 |
2004.06.29 |
申请号 |
US20020264398 |
申请日期 |
2002.10.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
KO CHUNG-CHI;LU YUNG-CHENG;LI LAIN-JONG;LI LIH-PING;CHEN YU-HUEI;KU SHU-E |
分类号 |
C30B1/00;H01L21/31;H01L21/312;H01L21/318;H01L21/469;H01L21/768;(IPC1-7):H01L21/31 |
主分类号 |
C30B1/00 |
代理机构 |
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代理人 |
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地址 |
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