发明名称 |
Triple sample sensing for magnetic random access memory (MRAM) with series diodes |
摘要 |
A data storage device that includes an array of resistive memory cells. The resistive memory cells may include a magnetic tunnel junction (MTJ) and a thin-film diode. The device may include a circuit that is electrically connected to the array and that is also capable of monitoring a signal current flowing through a selected memory cell. Once the signal current has been monitored, the circuit is capable of comparing the signal current to an average reference current in order to determine which of a first resistance state and a second resistance state the selected memory cell is in. Also, a method for operating the data storage device.
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申请公布号 |
US6757188(B2) |
申请公布日期 |
2004.06.29 |
申请号 |
US20020151915 |
申请日期 |
2002.05.22 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
PERNER FREDERICK A.;TRAN LUNG T.;ELDREDGE KENNETH J. |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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