发明名称 |
Direct power-to-ground ESD protection with an electrostatic common-discharge line |
摘要 |
ESD protection is provided by local ESD-protection devices between each pad and a common-discharge line (CDL). Each ESD-protection device has p-well or p-substrate taps to a local ground rather than to the CDL, reducing noise coupling from the I/O's through the CDL. Another ESD clamp that bypasses the CDL is provided between each pair of internal power and ground buses. Better protection of core circuits during power-to-ground ESD events is provided by bypassing the CDL since only one ESD clamp rather than two ESD-protection devices must turn on. The ESD clamps and ESD-protection devices can be gate-coupled n-channel transistors with coupling capacitors between the pad and the transistor gate. Devices can also be substrate-triggered transistors or active ESD clamps that include an inverter between a coupling capacitor to the CDL and the n-channel transistor gate.
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申请公布号 |
US6756834(B1) |
申请公布日期 |
2004.06.29 |
申请号 |
US20030249670 |
申请日期 |
2003.04.29 |
申请人 |
PERICOM SEMICONDUCTOR CORP. |
发明人 |
TONG PAUL C. F.;WONG SIU-WENG SIMON;XU PING PING;LIU ZHI QING;CHEN WENSONG |
分类号 |
H01L27/02;H03K5/08;(IPC1-7):H03K5/08 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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