发明名称 SEMICONDUCTOR SENSOR FOR RECORDING EXPLOSIVE GASEOUS COMPONENTS CONTAINED IN AIR
摘要 FIELD: micro-electronic engineering; test equipment for testing natural hydrocarbons in underground workings: mines, underground, municipal sewage systems; check of leakage of industrial and domestic gas. ^ SUBSTANCE: proposed sensor includes mono-crystal silicon substrate with silicon dioxide layer and temperature pickup made in form of resistive bridge located on said substrate. Applied in succession on silicon dioxide layer are the following layers: mono-crystal silicon layer having porous surface, second silicon dioxide layer, thermo-catalytic layer and insulating layer applied in two non-symmetric arms of bridge and used for protection of catalytic layer against atmosphere. Thermo-catalytic layer in two other arms non-symmetric of resistive bridge is left open for processing of oxidizing reaction of surface combustion of gaseous component of explosive compound with oxygen of air causing release of heat and consequently unbalance of bridge and appearance of electric signal. ^ EFFECT: enhanced response and sensitivity; avoidance regeneration of gas-sensitive layer, simplification of electronic circuit; operation of sensor in wide temperature range. ^ 4 dwg
申请公布号 RU2231779(C1) 申请公布日期 2004.06.27
申请号 RU20020128074 申请日期 2002.10.18
申请人 发明人 SINITSA S.P.
分类号 G01N27/12 主分类号 G01N27/12
代理机构 代理人
主权项
地址