发明名称 |
METHOD FOR MANUFACTURING METAL STRUCTURE USING TRENCH |
摘要 |
PURPOSE: A method for manufacturing a metal structure using a trench is provided to be capable of simplifying the manufacturing process and easily carrying out a post process. CONSTITUTION: A plurality of trenches are formed in a substrate(100). A seed layer(102) is deposited along the upper surface of the resultant structure. An insulating layer(103) is deposited on the seed layer. The insulating layer on the trenches is partially removed to expose the seed layer. The trenches are then filled with a metal layer(104). The insulating layer and the seed layer are removed from the resultant structure. Preferably, the insulating layer formed at the bottom of the trench is removed for obtaining a metal structure.
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申请公布号 |
KR20040055016(A) |
申请公布日期 |
2004.06.26 |
申请号 |
KR20020081580 |
申请日期 |
2002.12.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, SANG EON;NA, GYEONG WON;PARK, HAE SEOK;SIM, DONG SIK |
分类号 |
H01L21/3205;H01L21/768;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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