METHOD FOR MANUFACTURING FLASH MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a flash memory device is provided to prevent the thickness of an oxide layer of a dielectric layer from increasing and reinforce the isolation of a floating gate by carrying out the oxidation for the sidewall of a gate electrode using mixed gas of O2 and TCA. CONSTITUTION: A gate electrode is formed on a semiconductor substrate(10). The gate electrode is made of a tunnel oxide layer(12), a floating gate(18), a dielectric layer(24), and a control gate(26,28). An oxide layer(34) is formed at both sidewalls of the gate electrode by carrying out a dry oxidation using mixed gas of O2 and C2H2Cl3. The oxide layer is used for compensating for the damage due to an etching process for the gate electrode and intensifying the isolation of the floating gate.