METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the reliability of devices by completely removing the native oxide layer formed on a gate and junction region using post etching and RTP(Rapid Thermal Processing) under hydrogen gas atmosphere. CONSTITUTION: A gate is formed on a semiconductor substrate(201). A junction region(209) is formed at both sides of the gate in the substrate. An interlayer dielectric(210) is formed on the resultant structure. A plurality of contact holes(211a,211b) are formed in the interlayer dielectric for exposing the gate and junction region. At this time, a native oxide layer is formed on the gate and junction region. Pre-etching and RTP are carried out on the resultant structure for completely removing the native oxide layer. Contact plugs are formed in the contact holes.