METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR ENHANCING STATE OF INSULATING LAYER

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to improve the reliability by enhancing a state of an insulating layer between gate electrodes using multi-step insulating layer forming processes. CONSTITUTION: A plurality of gate electrodes(30) are formed on a semiconductor substrate(10) via a gate insulating layer(20). The first insulating layer(1) is formed along the upper surface of the resultant structure. The second insulating layer is formed on the first insulating layer. The other insulating layers are repeatedly formed on the entire surface of the resultant structure until a vacancy between the gate electrodes is completely filled.