| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to increase the surface area of a lower electrode in the same area and improve capacitance by making the lower electrode formed of a wrinkled dual crown structure. CONSTITUTION: The first doping poly is deposited on a semiconductor substrate(100) having a plug(110). A photoresist layer pattern whose sidewall is wrinkled by a standing wave effect is formed on the first doping poly. An LTO(low-temperature oxide) layer is deposited on the resultant structure having the photoresist layer pattern. The LTO layer except the LTO layer on the sidewall of the photoresist layer pattern is etched. The first doping poly is etched to form a plug pad(125). The photoresist layer pattern is eliminated. The second doping poly is deposited on the resultant structure. The second doping poly deposited on the LTO layer and the second doping poly deposited on the semiconductor substrate are partially etched back. The LTO layer is wet-etched.
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