METHOD FOR FORMING GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate of a semiconductor device is provided to reduce the size of a semiconductor device by overlapping photoresist patterns with a time lag and by embodying a gate of an ultra-fine line width in the overlapped portion. CONSTITUTION: A gate oxide(12) is formed on a silicon substrate(11). After polysilicon(13) to be used as a gate electrode is deposited, a mask thin film(14) to be used as a hardening mask in a gate etch process is formed. The first photoresist pattern is formed on the mask thin film. An etch process is performed to etch the mask thin film. After the first photoresist pattern is removed, the second photoresist pattern(16) is formed on a part of the remaining mask thin film after the etch process and on the polysilicon. The mask thin film is etched based upon the second photoresist pattern. After the second photoresist pattern is eliminated, the polysilicon is etched by using the mask thin film partially left on the polysilicon. The mask thin film left on the polysilicon is removed to form the gate.