| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the deterioration of a high concentration junction region by forming the junction region using a high concentration ion implantation after the process for forming a silicide layer. CONSTITUTION: A gate electrode(20) is formed on a semiconductor substrate(10). A low concentration junction region(24,26) is formed at both sides of the gate electrode in the substrate by carrying out a low concentration ion implantation. A spacer(30) is formed at both sidewalls of the gate electrode. A silicide layer(32) is formed on the gate electrode and low concentration junction region. Nitrogen ion implantation is carried out on the silicide layer. A high concentration junction region(34) is deeply formed in the substrate by carrying out a high concentration ion implantation. A source/drain(36) is completed by carrying out heat treatment for activation on the low and high concentration junction region.
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