| 摘要 |
PURPOSE: A method for forming an STI(shallow trench isolation) oxide layer of a semiconductor process is provided to improve a characteristic of a semiconductor device by making uniform an oxide layer for forming an STI regardless of the width of a pattern. CONSTITUTION: A trench is formed in a nitride layer(22) on a silicon substrate(20). The first oxide layer is deposited and blanket-etched to perform a gap-fill process so that the first oxide layer in the trench has a height not greater than the bottom surface of the nitride layer. After the second oxide layer is deposited, the second oxide layer is polished and gap-filled to have a similar height to the nitride layer. The nitride layer is stripped.
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