| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to obtain an isolation layer having a high aspect ratio without voids by filling the first and second trench using an HDP(High Density Plasma) oxide layer and a thermal oxide layer. CONSTITUTION: The first trench is formed by selectively patterning a semiconductor substrate(110). A barrier layer(124) is formed along the upper surface of the resultant structure. The second trench(128) is formed by selectively patterning the bottom of the first trench. The width of the second trench is smaller than that of the first trench. The second trench is filled with a thermal oxide layer by oxidation. The barrier layer is removed from the resultant structure. Then, the first trench is filled with an HDP oxide layer.
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