FABRICATION METHOD OF ELECTROOPTIC SUBSTRATE, A FABRICATION METHOD OF AN ELECTROOPTIC DEVICE, AN ELECTROOPTIC DEVICE, PARTICULARLY IN RELATION TO APPLYING SILICON ON INSULATOR(SOI) TECHNOLOGY

摘要

PURPOSE: A fabrication method of an electrooptic substrate, a fabrication method of an electrooptic device, and an electrooptic device are provided to fabricate an electrooptic substrate with high throughput to obtain high reliability by forming shielding layers on a surface of the substrate through an application of SOI technology. CONSTITUTION: Shielding layers(211) are formed on a supporting substrate(210) in predetermined patterns. An insulator layer(212) is formed on the patterned shielding layers(211). Semiconductor layers(206) are formed on the insulator layer(212). Oxidize layers(226a) are formed by oxidizing a portion of the semiconductor layers(206). The oxidize layers(226a) are removed. A layer thickness of the oxidize layers(226a) is set to be smaller than that of the insulator layer(212).