| 摘要 |
PURPOSE: A method for manufacturing a flash memory device is provided to prevent the leakage current of a dielectric layer by forming a slope portion at the upper corner of a floating gate electrode using a polymer layer formed at both sidewalls of a barrier layer. CONSTITUTION: The second polysilicon layer(120), a barrier layer(122), a photoresist pattern(124) are sequentially formed on a semiconductor substrate(110). The semiconductor substrate includes an isolation layer(112), and a tunnel oxide layer(114) and the second polysilicon layer(116) between the isolation layer. The barrier layer is selectively etched by using the photoresist pattern as an etching mask. At this time, a polymer layer(126) is formed at both sidewalls of the barrier layer. The second polysilicon layer is etched by using the polymer layer as an etching mask. The photoresist pattern, the polymer layer, and the barrier layer are removed from the resultant structure. A dielectric layer and a control gate are sequentially formed on the resultant structure.
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