SEMICONDUCTOR MEMORY DEVICE HAVING DIFFERENT ACTIVE OPERATION OF BANK AND BANK ACTIVE CONTROL METHOD IN SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device having a different active operation of a bank and a bank active control method in the semiconductor memory device are provided to reduce current consumption during a self refresh. CONSTITUTION: A row address counter(240) receives a signal which is enabled when an auto refresh command is inputted from the external or is enabled at every constant time by a timer comprised in the semiconductor memory device if a self refresh command is inputted from the external. A refresh active control unit(250-1,250-2) receives an output signal of the row address counter and a self refresh flag signal enabled during a self refresh operation period, and outputs a signal including a logic signal having a different phase during an auto refresh mode and a self refresh mode. A bank active control unit(210-1,210-2,210-3,210-4) enables a part of a plurality of banks selectively during the self refresh mode according to a control signal being output from the refresh active control unit. A row decoder(220-1,220-2,220-3) receives an output signal and a row address signal from the bank active control unit and outputs a decoding signal enabling a word line of a corresponding bank. And the plurality of banks enable a plurality of cells connected to the word line according to a decoding signal from the row decoder.