METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO IMPROVE REFRESH CHARACTERISTIC AND RELIABILITY

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve the refresh characteristic by controlling the leakage current generated along the edge of an insulation spacer formed on the sidewall of a gate electrode, and to increase the breakdown voltage of a junction, thererby improving the characteristics and reliability of the semiconductor device. CONSTITUTION: An isolating oxide layer(14) is formed on a semiconductor substrate(12). A gate electrode is formed on the isolating oxide layer and an active region. LDD(lightly doped drain) ions are implanted into a source/drain region(20) of the semiconductor substrate at both sides of the gate electrode. A spacer is formed on both sidewalls of the gate electrode. A conductive layer is formed by a selective growth method to compensate for the bird's beak part of the isolating oxide layer damaged in the process for forming the spacer. After high density ions are implanted into the source/drain region, a heat treatment is performed.