| 摘要 |
PURPOSE: A semiconductor device having a self-aligned contact pad and a manufacturing method thereof are provided to be capable of decreasing the thickness of a gate, reducing the capacitance between a DC(Direct Contact) pad and the gate, and removing the defect due to a short phenomenon. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate(100), an isolation layer(102) formed in the semiconductor substrate, and a plurality of gate stacks(300). At this time, the gate stack is completed by sequentially forming a gate isolating layer(106), a gate(108), a metal silicide layer(202), and a capping layer(302) on the semiconductor substrate. The semiconductor device further includes an oxide spacer(120') formed at both sidewalls of the gate stack and a self-aligned contact pad(118) between the gate stacks.
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