METHOD FOR MANUFACTURING SHALLOW TRENCH FOR ISOLATION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a shallow trench for the isolation of a semiconductor device is provided to minimize parasitic capacitance by forming a void in a trench. CONSTITUTION: A pad oxide layer and a nitride layer are sequentially formed on a silicon wafer(10). The first trench is formed for defining an isolation region by selectively etching the nitride layer, the pad oxide layer, and the silicon wafer. The first insulating layer(40) is thickly deposited on the entire surface of the resultant structure. The second trench is formed at the first insulating layer of the first trench. The second trench is transformed into a void(65) by depositing the second insulating layer(70) on the first insulating layer. A planarization is carried out on the resultant structure. Then, the nitride layer is removed by carrying out a cleaning process on the resultant structure.