| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the step between the first and second region by carrying out a CMP(Chemical Mechanical Polishing) process on the first organic anti-reflective coating. CONSTITUTION: A semiconductor substrate(110) is defined with the first region(A) having a sparse contact hole pattern and the second region(B) having a dense contact hole pattern. The first organic anti-reflective coating(116) is coated on the entire surface of the resultant structure for completely filling the contact hole patterns. A CMP process is carried out on the resultant structure by using desired slurry containing an organic solvent. The second organic anti-reflective coating(118) is coated on the entire surface of the resultant structure.
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