发明名称 SEMICONDUCTOR DEVICE WITH TRANSISTORS FOR BILATERAL SWITCHING-OPERATION AND SUSTAIN CIRCUIT
摘要 PURPOSE: A semiconductor device and a sustain circuit are provided to restrain power loss and to reduce the size by using transistors for a bilateral switching-operation. CONSTITUTION: A semiconductor device includes the first transistor(1) and the second transistor(2). The first transistor includes the first substrate(11) containing the first conductive type impurities, the first electrode(15) on the first substrate, the second electrode(18) beneath the first substrate, and the first control electrode(17) on the first substrate. The second transistor includes the second substrate(21) containing the first conductive type impurities, the third electrode(25) on the second substrate, the fourth electrode(28) beneath the second substrate, and the second control electrode(27) on the second substrate. The upper portion of the first transistor is connected with that of the second transistor, so that the third electrode is electrically connected with the first electrode.
申请公布号 KR20040054581(A) 申请公布日期 2004.06.25
申请号 KR20030093516 申请日期 2003.12.19
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KITABATAKE MAKOTO;ASADA KAZUHIKO;YAMASHITA HIDEKAZU;NAGAGATA NOBUYOSHI;NOBORI KAZUHIRO;OMORI HIDEKI;OGAWA MASANORI
分类号 H01L29/78;H01L25/065;H01L25/18;H01L27/06 主分类号 H01L29/78
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