HIGH SPEED AND LOW POWER CONSUMPTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A high speed and low power consumption semiconductor device and a manufacturing method thereof are provided to restrain the increase of parasitic capacitance between a gate electrode and a semiconductor substrate and improve electrical characteristics by forming a thin gate isolating layer and a thick insulating layer at the bottom and sidewall of a concavity of the semiconductor substrate. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate(111) having a concavity, a gate electrode(135) protruded from the concavity to the upward direction, and an insulating layer(132) between the semiconductor substrate and the gate electrode. At this time, the insulating layer is made of the first and second insulating layer(131,129a).