| 摘要 |
In the method of manufacturing a semiconductor device ( 1 ) with a semiconductor body ( 2 ), a doped zone ( 3 ) is formed in the semiconductor body ( 2 ). The semiconductor body ( 2 ) has a crystalline surface region ( 4 ), which crystalline surface region ( 4 ) is at least partly amorphized so as to form an amorphous surface layer ( 5 ). The amorphization is achieved by irradiating the surface ( 6 ) with a radiation pulse ( 7 ) which is absorbed by the crystalline surface region ( 4 ). The radiation pulse ( 7 ) has a wavelength which is chosen such that the radiation is absorbed by the crystalline surface region ( 4 ), and the energy flux of the radiation pulse ( 7 ) is chosen such that the crystalline surface layer ( 5 ) is melted. The method is useful for making ultra-shallow junctions.
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