| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of uniformly conserving the temperature of a wafer before a wafer loading process for minimizing the change of CD(Critical Dimension) due to the temperature change according to each equipment. CONSTITUTION: The direction of wafers is set by loading a cassette stored in a port to an orient chamber. A preheating process is carried out on the wafer loaded on a chuck in the orient chamber. The wafer is loaded to an etching chamber. An etching process is carried out on the wafer by flowing process gas at a predetermined high voltage. At this time, plasma is generated in the etching chamber. Preferably, the preheating temperature is increased to the temperature of a cathode, wherein the cathode installed in the etching chamber. Preferably, the preheating process is performed by using a heater installed at the chuck of the orient chamber.
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