ANISOTROPIC DRY ETCHING METHOD OF ZINC OXIDE SEMICONDUCTOR FOR PHOTO DEVICE USING BCl3 PLASMA GAS

摘要

PURPOSE: An anisotropic dry etching method of zinc oxide semiconductor for a photo device using BCl3 plasma gas is provided to be capable of increasing etching rate, obtaining an uniform surface, and improving anisotropic etching characteristics. CONSTITUTION: A zinc oxide layer is deposited on a semiconductor substrate. The resultant structure is stably loaded on a susceptor in a reaction chamber. Predetermined plasma is generated by supplying BCl3-containing gas into the reaction chamber. Then, a dry etching process is carried out on the resultant structure by using the predetermined plasma. Preferably, the BCl3-containing gas further contains Cl2. Preferably, the BCl3-containing gas further contains Ar. Preferably, the dry etching process is carried out at the pressure of 1 mTorr to 1 Torr.