| 摘要 |
A manufacturing process of a stacked semiconductor device (14) is described, comprising the following steps: integrating a plurality of electronic devices in a plurality of active areas realised in a semiconductor wafer (9a), distributing an adhesive layer (10) on active areas, splitting the semiconductor wafer (9a) into a plurality of first dies (9), each one comprising at least one of the active areas; mounting the plurality of first dies (9), which are already equipped with the adhesive layer (10), on a support (7), mounting a plurality of second dies (12) on the adhesive layer (10). <??>A stacked semiconductor device (14) is also described, which comprises a first die (9) mounted on a support (7), an intermediate adhesive layer (10) and a second die (12) mounted on the adhesive layer (10) which is a polymeric layer. <IMAGE> |
