STRUCTURE OF HIGH-VOLTAGE ELEMENT, STRUCTURE OF LOW-VOLTAGE ELEMENT, AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A structure of a high-voltage element, a structure of a low-voltage element, and a fabricating method thereof are provided to form the high-voltage element having low junction capacitance and the low-voltage element having a compatible characteristic by dividing a silicon element region into a high-voltage element region and a low-voltage element region. CONSTITUTION: A first oxide layer and a nitride layer are sequentially deposited on an SOI substrate including a bottom substrate(200), a buried oxide layer(202), and a top silicon layer. A high-voltage element region is defined on an entire structure and the nitride layer and the first oxide layer are removed from the high-voltage element region. A second oxide layer is grown on the high-voltage element region. The second oxide layer, the remaining nitride layer, and the first oxide layer are removed therefrom. An isolation region is defined. A high-voltage element region and a low voltage element region are formed on the isolation region by etching the top silicon region. A p-well(214) is formed on the low-voltage element region. A p-well(218) and a floating region(216) are formed on the high-voltage element region. A thin gate insulating layer(228) is formed on the low-voltage element region. A thick gate insulating layer(226) is formed on the high-voltage element region. A plurality of gate electrodes(230a,230b), a plurality of LDD regions(232a-232c), a plurality of sidewall oxide layers, and a plurality of source/drain regions(236a-236d) are formed on the low-voltage element region and the high-voltage element region. An interlayer dielectric(238) is deposited on a top part of the entire structure. A source electrode(240a) and a drain electrode(242a) are formed thereon.