METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the TED(Transient Enhanced Diffusion) of dopants due to post-heat treatment by carrying out an oxidation after an ion implantation. CONSTITUTION: An ion layer(12) is formed in a semiconductor substrate(10) by carrying out an ion implantation. The first oxidation is carried out on the resultant structure for thermally stabilizing the implanted ions. At this time, an oxide layer(14) is formed on the resultant structure. The oxide layer is removed from the resultant structure by carrying out a wet etching process. A tunnel oxide layer is formed on the resultant structure by carrying out the second oxidation.