发明名称 Lithography process to reduce seam lines in an array of microelements produced from a sub-mask and a sub-mask for use thereof
摘要 A method and a mask have been optimized to reduce seam lines in replicated structures using lithographic processes. Multiple exposures and sweeps across a substrate using the mask results in the reduction of seam lines in the final developed photosensitive or micro formed structures.
申请公布号 US2004121246(A1) 申请公布日期 2004.06.24
申请号 US20030665531 申请日期 2003.09.22
申请人 BROWN DAVID R. 发明人 BROWN DAVID R.
分类号 G03F7/20;(IPC1-7):B28B7/12;G03C5/00;B28B7/32;G03F9/00;B29D11/00;G02B6/18 主分类号 G03F7/20
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