发明名称 |
Lithography process to reduce seam lines in an array of microelements produced from a sub-mask and a sub-mask for use thereof |
摘要 |
A method and a mask have been optimized to reduce seam lines in replicated structures using lithographic processes. Multiple exposures and sweeps across a substrate using the mask results in the reduction of seam lines in the final developed photosensitive or micro formed structures.
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申请公布号 |
US2004121246(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
US20030665531 |
申请日期 |
2003.09.22 |
申请人 |
BROWN DAVID R. |
发明人 |
BROWN DAVID R. |
分类号 |
G03F7/20;(IPC1-7):B28B7/12;G03C5/00;B28B7/32;G03F9/00;B29D11/00;G02B6/18 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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