发明名称 MAGNETIC MEMORY DEVICE, WRITE CURRENT DRIVING CIRCUIT, AND WRITE CURRENT DRIVING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a magnetic memory device and a write current driving circuit for supplying a write current of a constant amount to a write line while bi-directionally changing over the flowing direction, and to provide a write current driving method. SOLUTION: Transistors Q3, Q4 are differentially operated by a data signal input. Transistors Q5, Q6 are operated in accordance with the switching state of the transistors Q3, Q4 to control the operation of transistors Q1, Q2. The transistor Q1 assumes the same switching state as that of the transistor Q4, and the transistor Q2 assumes the same switching state as that of the transistor Q3. The direction of the current flowing into the write line 6X (6Y) connected between drive points A and B is decided in accordance with the switching states of the transistors Q1 to Q4. This current is controlled to be constant by a transistor Q8 whereto a specified voltage is inputted and by a current limiting resistor R4. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004178623(A) 申请公布日期 2004.06.24
申请号 JP20020339932 申请日期 2002.11.22
申请人 TDK CORP 发明人 EZAKI KIICHIROU;KAKINUMA YUJI;KOGA KEIJI
分类号 G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/15 主分类号 G11C11/15
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