发明名称 Gate-clocked domino circuits with reduced leakage current
摘要 A gate-clocked domino circuit with reduced leakage current during an inactive state, where domino stages in the domino circuit have long channel length transistors in the pre-charge paths. During an inactive state, the domino stages are put in an evaluation state and are discharged.
申请公布号 US2004119503(A1) 申请公布日期 2004.06.24
申请号 US20020324307 申请日期 2002.12.18
申请人 JAMSHIDI SHAHRAM;KUMAR SUDARSHAN 发明人 JAMSHIDI SHAHRAM;KUMAR SUDARSHAN
分类号 H03K19/096;(IPC1-7):H03K19/20 主分类号 H03K19/096
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