| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-performance magnetic tunnel junction element, and its manufacturing method, that combines a magnetic resistance buffer layer having a stated thickness with a tunnel barrier layer for improved homogeneity, thus obtaining a high MR (Magnetoresistance) ratio and a low RA (Resistance Area) value. <P>SOLUTION: The magnetic tunnel junction element, which has a substrate 11, fixed beds 12, 13, and 15 laminated in sequence on the substrate, a tunnel barrier layer 19, and a free bed 21, is provided with a magnetoresistance buffer layer 17, made of a metal nitride, between the fixed beds 12, 13, and 15, and the tunnel barrier layer 19, and is heat-treated as a whole, thus having reduced magnetic junction resistance. Further, the manufacturing method for the junction element is also included in this invention. <P>COPYRIGHT: (C)2004,JPO</p> |
