METHOD AND DEVICE FOR MANUFACTURING SILICON NITRIDE-BASED INSULATING FILM BY CHEMICAL VAPOR PHASE GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method by which a silicon nitride film or silicon oxy-nitride film can be manufactured by the CVD method without generating any ammonium chloride nor allowing the intrusion of carbon-based contaminants into the film. SOLUTION: In this method, silicon nitride-based insulating films are resepectively formed on substrates in a reaction chamber for chemical vapor phase growth housing at least one substrate by causing a reaction between at least one kind of precursor gas selected from among a group composed of monosilyl amine, disilyl amine, and carbon- and chlorine-free silazane compound and an ammonia gas by supplying both gases into the reaction chamber. The silicon oxy-nitride film is obtained by further introducing a supply source of oxygen into the chamber. At the time of forming the silicon oxy-nitride film, diaminosilane can also be used as the precursor gas. COPYRIGHT: (C)2004,JPO