发明名称 |
Laser with reduced parasitic etalon effects |
摘要 |
According to the present invention, laser performance is improved by appropriately matching the spectral periods of various etalons within the laser cavity. A first embodiment of the invention is a discretely tunable external cavity semiconductor laser where a grid fixing etalon is present in the laser cavity, the grid fixing etalon free spectral range (FSR) is a whole number multiple of the laser cavity FSR, and the grid fixing etalon FSR is a whole number multiple of the chip etalon FSR. A second embodiment of the invention is a fixed wavelength external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR, and a mode suppressing etalon is inserted into the laser cavity such that the mode suppressing etalon FSR is a whole number multiple of the chip etalon FSR. A third embodiment of invention is a tunable external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR. A fourth embodiment of the invention is a fixed wavelength external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR.
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申请公布号 |
US2004120364(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
US20020327576 |
申请日期 |
2002.12.20 |
申请人 |
KOULIKOV SERGUEI;PAKULSKI GRZEGORZ;PALDUS BARBARA A.;RELLA CHRIS W.;XIE JINCHUN |
发明人 |
KOULIKOV SERGUEI;PAKULSKI GRZEGORZ;PALDUS BARBARA A.;RELLA CHRIS W.;XIE JINCHUN |
分类号 |
H01S3/08;H01S3/098;H01S3/10;H01S3/106;H01S5/10;H01S5/14;(IPC1-7):H01S3/10 |
主分类号 |
H01S3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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