| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to restrain the generation of moat at the upper corner of a trench by sequentially carrying out a nitrogen ion implantation and a heat treatment on an HDP(High Density Plasma) oxide layer. CONSTITUTION: A pad oxide and nitride pattern(104,106) are formed on a semiconductor substrate(102). A trench is formed by selectively etching the substrate using the pad oxide and nitride pattern as an etching mask. A wall oxide layer(110) is formed on the inner wall of the trench. The trench is filled with an HDP oxide layer(112). A nitrogen ion implantation is carried out on the HDP oxide layer. A heat treatment is carried out on the HDP oxide layer under nitrogen gas atmosphere. An isolation layer is completed by removing the pad nitride pattern.
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