MULTILAYER PHOTORESIST SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a silicon-containing photoresist system of high plasma etching resistance and antireflectivity and high resolution.

SOLUTION: The photoresist system is composed of a structural component containing an aromatic group and/or alicyclic group and an ingredient containing a chromophore in a lower layer. The upper layer resist is composed of a photoactive component and a silicon-containing ingredient. The chromophore contains an anthracene group and the alicyclic group contains any of an adamantyl, norbornyl or isobornyl group.

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