METHOD FOR FORMING NANOSTRUCTURE OF UNIFORM AND CONTROLLED-SIZE SEMICONDUCTOR MATERIAL ON DIELECTRIC MATERIAL BY MEANS OF CVD METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for forming the nanostructure of a uniform and controlled-size semiconductor material on a dielectric material by using CVD method.

SOLUTION: The method for the nanostructure of the semiconductor material on the dielectric material includes a step, in which a stable nucleus(14) of a first semiconductor material is formed from a precursor(11) of the first semiconductor material on a substrate(12) by the CVD method, a step in which the precursor is selected to enable the formation of the nucleus(14), and a step in which nanostructures (16A, 16B) of a second semiconductor material are formed from the stable nucleus(14) of the first material, using a selected precursor(21) so that the second semiconductor material is selectively deposited only on the nucleus(14) by the CVD method. Additionally, this invention concerns a device, having a nanostructure formed by one of the methods and its nanostructure.

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