| 摘要 |
PROBLEM TO BE SOLVED: To reduce oxygen content at the time of forming a silicide for turning the silicide into a low resistance. SOLUTION: A non-formation area B where any silicide is not formed is covered with a silicon oxide film 61. Afterwards, a cobalt film covering impurity layers 11 and 12 is formed. After the silicon oxide film 61 is formed, heat treatment is carried out before the cobalt film is formed so that oxygen can be eliminated from the silicon oxide film 61. Thus, it is possible to reduce the elimination of oxygen from the silicon oxide film 61 in the heat treatment for forming the silicide to be performed after the cobalt film 62 is formed. Therefore, it is possible to reduce the oxidation or coagulation of cobalt or Si. COPYRIGHT: (C)2004,JPO
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