| 发明名称 |
Method of forming a dual damascene pattern in a semiconductor device |
| 摘要 |
The present invention is directed to a method of forming a dual damascene pattern in a fabrication process of a semiconductor device, which is capable of simplifying a fabrication process of a semiconductor device by filling a via hole with a photoresist, using a reflow phenomenon of the photoresist, in an ashing process.
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| 申请公布号 |
US2004121578(A1) |
申请公布日期 |
2004.06.24 |
| 申请号 |
US20030704966 |
申请日期 |
2003.11.12 |
| 申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
NAM SANG-WOO |
| 分类号 |
H01L21/28;H01L21/311;H01L21/768;(IPC1-7):H01L21/476;H01L21/31;H01L21/469 |
主分类号 |
H01L21/28 |
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