发明名称 |
DENSE DUAL-PLANE DEVICES |
摘要 |
A MOS device with first and second freestanding semiconductor bodies formed on a substrate. The first freestanding semiconductor body has a first portion thereof disposed at a non-orthogonal, non parallel orientation with respect to a first portion of the second freestanding semiconductor body. These portions of said first and second freestanding semiconductor bodies have respective first and second crystalline orientations. A first gate electrode crosses over at least part of said first portion of said first freestanding semiconductor body at a non-orthogonal angle, as does a second gate electrode over the first portion of the second freestanding semiconductor body.
|
申请公布号 |
US2004119100(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
US20020248123 |
申请日期 |
2002.12.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NOWAK EDWARD J.;RAINEY BETHANN |
分类号 |
H01L21/336;H01L21/8238;H01L27/092;H01L27/12;H01L29/786;(IPC1-7):H01L21/00;H01L29/94 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|