ELECTRON BEAM LITHOGRAPHY METHOD USING ELECTRON BEAM TO REDUCE TURN-ON VOLTAGE AND RELATIVELY INCREASE CURRENT DENSITY

摘要

PURPOSE: An electron beam lithography method using an electron beam is provided to reduce a turn-on voltage and relatively increase a current density by irradiating light to a field emitter from the outside when electrons are emitted from the field emitter. CONSTITUTION: A photoresist layer stacked on a substrate is exposed by using the electron beam(4) emitted from a field emitter(6). While the photoresist layer is exposed by the electron beam emitted from the field emitter, light is irradiated to the field emitter to decrease the turn-on voltage of the field emitter and increase a current density. The field emitter is made of diamond or non-crystalline carbon. The light irradiated to the field emitter is visible rays or ultraviolet rays.