| 摘要 |
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a delta doped silicon carbide MESFET having a source (13), a drain 817) and a gate (24). The gate (24) is situated between the source (13) and the drain (17) and extends into a doped channel layer (16) of a first conductivity type. Regions of silicon carbide adjacent to the source (13) and the drain (17) extend between the source (13) and the gate and the drain (17) and the gate (24), respectively. The regions of silicon carbide have carrier concentrations that are greater than a carrier concentration of the doped channel layer (16) and are spaced apart from the gate (24).
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