| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of securing a process margin and simplifying a mask process. CONSTITUTION: The first insulating layer(108) is formed on the entire surface of a semiconductor substrate(100). The semiconductor substrate includes a source/drain region(105,106) and gate electrodes(104). The first contact hole of a hole type is formed by firstly etching the first insulating layer for exposing the drain region. The first landing plug(112) is formed in the first contact hole. The second contact hole of a line type is formed by secondly etching the first insulating layer for exposing the source region. The second landing plug(115) is formed in the second contact hole. The second insulating layer(116) is formed on the entire surface of the resultant structure. The third contact hole(117) is formed in the second insulating layer for exposing the first landing plug. A bit line(118) is formed on the resultant structure for filling the third contact hole. The first and second landing plug are doped with phosphor ions of low and high concentration, respectively.
|
