| 摘要 |
PURPOSE: A new DRAM(Dynamic Random Access Memory) cell structure is provided to prevent the deterioration of data memory due to the increase of a leakage current at a cell by installing switch parts around a storage node contact and applying negative bias to the switch parts in data reading/writing operation. CONSTITUTION: A new DRAM cell structure comprises a semiconductor substrate(31), an isolation layer(32), a plurality of word lines(33), a source/drain region at both sides of each word line, and the first interlayer dielectric(34). The DRAM cell structure further includes a bit line(35) on the first interlayer dielectric for contacting the drain region, the second and third interlayer dielectric(36,38) on the first interlayer dielectric for enclosing the bit line, a storage node contact(39) in the first, second, and third interlayer dielectric for contacting the source region, a storage node contact switch(37) at both sides of the storage node contact on the second interlayer dielectric, and a capacitor(44) on the third interlayer dielectric for contacting the storage node contact.
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